| PART |
Description |
Maker |
| 6MBI150U2B-060 |
IGBT MODULE (U series) 600V / 150A
|
FUJI ELECTRIC HOLDINGS CO., LTD.
ETC
|
| 6MBP300VEA060-50 |
IGBT MODULE (V series) 600V / 300A / IPM
|
Fuji Electric
|
| 2MBI300VB-060-50 |
IGBT MODULE (V series) 600V / 300A / 2 in one package
|
Fuji Electric
|
| 6MBP50VDA060-50 |
IGBT MODULE (V series) 600V / 50A / IPM
|
Fuji Electric
|
| 6MBP150VDA060-50 |
IGBT MODULE (V series) 600V / 150A / IPM
|
Fuji Electric
|
| HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FGB20N6S2 FGH20N6S2 FGP20N6S2 FGB20N6S2T |
28 A, 600 V, N-CHANNEL IGBT, TO-263AB TO-263AB, 3 PIN
600V/ SMPS II Series N-Channel IGBT
600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Package
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG30N60A4D |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with
|
Fairchild Semiconductor
|
| QIQ0645002 |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
| FGK60N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
INDUSTRIAL POWER SUPPLY, 85-265VAC/120-330VDC INPUT, 24V@14A RoHS Compliant: Yes
|
http://
Fairchild Semiconductor Corporation
|
| HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
